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当前位置--代理品牌--Dynex Semiconductor--超大功率IGBT模块

IGBT模块: 我们将IGBT模块按电压等级分组,各组的最大工作电压如下。各表格按电流升序方式显示电路结构。

IGBT模块 - 600V
  IGBT模块-斩波
Part Number
Type
IC @ Tc
(A)
(°C)
IC(PK)
(A)
VCE(SAT)
@
Tc=25°C
(V)
Total Esw
@
Tc=125°C
(mJ)
Rth(j-c)
(IGBT
arm)
(°C/kW)
Outline
Type
Code
Baseplate
Dimensions
(mm)
Baseplate
Material
DIM250WKS06-S
(Upper Arm Control)
Standard
250
65
500
2.1
48
108
W
107 x 62
Cu
DIM250WLS06-S
(Lower Arm Control)
Standard
250
65
500
2.1
48
108
W
107 x 62
Cu
DIM375WKS06-S
(Upper Arm Control)
Standard
375
65
750
2.1
48
72
W
107 x 62
Cu

DIM375WLS06-S
(Lower Arm Control)
Standard
375
65
750
2.1
48
72
W
107 x 62
Cu
  IGBT模块-二单元
Part Number
Type
IC @ Tc
(A)
(°C)
IC(PK)
(A)
VCE(SAT)
@
Tc=25°C
(V)
Total Esw
@
Tc=125°C
(mJ)
Rth(j-c)
(IGBT
arm)
(°C/kW)
Outline
Type
Code
Baseplate
Dimensions
(mm)
Baseplate
Material
Standard
250
65
500
2.1
48
108
W
107 x 62
Cu
Standard
375
65
500
2.1
55
72
W
107 x 62
Cu
IGBT模块-一单元
Part Number
Type
IC @ Tc
(A)
(°C)
IC(PK)
(A)
VCE(SAT)
@
Tc=25°C
(V)
Total Esw
@
Tc=125°C
(mJ)
Rth(j-c)
(IGBT
arm)
(°C/kW)
Outline
Type
Code
Baseplate
Dimensions
(mm)
Baseplate
Material
Standard
500
65
1000
2.1
115
43
B
107 x 62
Cu
 备注:

   1.总Esw (开关能量) = Eon+Eoff.

IGBT 模块 - 1200V
IGBT模块-双向开关
Part Number
Type
 
VDRM - (V)
IC @ Tc
(A)
(°C)
IC(PK)
(A)
VT
(V)
Total
Esw
@
Tc=125°C
(mJ)
Rth(j-c)
(IGBT
arm)
(°C/kW)
Outline
Type
Code
Baseplate
Dimensions
(mm)
Baseplate
Material
Low Loss
±1200
200
80
400
4.3
67
87
W
107 x 62
Cu
IGBT模块-斩波
Part Number
Type
IC @ Tc
(A)
(°C)
IC(PK)
(A)
VCE(SAT)
@
Tc=25°C
(V)
Total Esw
@
Tc=125°C
(mJ)
Rth(j-c)
(IGBT
arm)
(°C/kW)
Outline
Type
Code
Baseplate
Dimensions
(mm)
Baseplate
Material
Low Loss
200
80
400
2.2
67
90
W
107 x 62
Cu
Low Loss
200
80
400
2.2
67
90
W
107 x 62
Cu
Low Loss
400
80
800
2.2
120
45
W
107 x 62
Cu
Low Loss
400
80
800
2.2
120
45
W
107 x 62
Cu
Low Loss
800
85
1600
2.2
280
18
D
140 x 130
Cu
Low Loss
800
80
1600
2.2
280
18
D
140 x 130
AlSiC
IGBT模块-双开关
Part Number
Type
IC @ Tc
(A)
(°C)
IC(PK)
(A)
VCE(SAT)
@
Tc=25°C
(V)
Total Esw
@
Tc=125°C
(mJ)
Rth(j-c)
(IGBT
arm)
(°C/kW)
Outline
Type
Code
Baseplate
Dimensions
(mm)
Baseplate
Material
Low Loss
400
85
800
2.2
120
36
D
140 x 130
AlSiC
Low Loss
400
85
800
2.2
120
36
D
140 x 130
Cu
Trench
600
75
1200
1.7
220
42.5
D
140 x 130
AlSiC
Low Loss
600
85
1200
2.2
200
24
D
140 x 131
Cu
Low Loss
800
85
1600
2.2
280
18
D
140 x 130
AlSiC
Trench
800
70
1600
1.7
270
34
D
140 x 130
AlSiC
Low Loss
800
85
1600
2.2
280
18
D
140 x 130
Cu
Trench
1200
70
2400
1.7
440
24
D
140 x 130
AlSiC

IGBT模块- 二单元

Part Number
Type
IC @ Tc
(A)
(°C)
IC(PK)
(A)
VCE(SAT)
@
Tc=25°C
(V)
Total Esw
@
Tc=125°C
(mJ)
Rth(j-c)
(IGBT
arm)
(°C/kW)
Outline
Type
Code
Baseplate
Dimensions
(mm)
Baseplate
Material
Low Loss
200
80
400
2.2
67
90
W
107 x 62
Cu
Trench
200
70
400
1.7
58
135
W
107 x 62
Cu
Low Loss
300
80
600
2.2
90
67
W
107 x 62
Cu
Trench
300
70
600
1.7
88
90
W
107 x 62
Cu
Low Loss
400
80
800
2.2
120
45
W
107 x 62
Cu
Trench
400
70
800
1.7
120
67
W
107 x 62
Cu
IGBT模块- 一单元
Part Number
Type
IC @ Tc
(A)
(°C)
IC(PK)
(A)
VCE(SAT)
@
Tc=25°C
(V)
Total Esw
@
Tc=125°C
(mJ)
Rth(j-c)
(IGBT
arm)
(°C/kW)
Outline
Type
Code
Baseplate
Dimensions
(mm)
Baseplate
Material
Low Loss
400
700
800
1.7
120
45
B
107 x 62
Cu
Trench
600
80
1200
2.2
180
67
B
107 x 62
Cu
Low Loss
600
80
1200
2.2
180
30
B
107 x 62
Cu
Trench
600
80
1200
1.7
175
45
B
107 x 62
Cu
Low Loss
800
85
1600
2.2
280
18
F
140 x 130
AlSiC
Low Loss
800
85
1600
2.2
280
18
F
140 x 130
Cu
Low Loss
1200
85
2400
2.2
400
12
F
140 x 130
AlSiC
Low Loss
1200
85
2400
2.2
400
14
F
140 x 130
Cu
Trench
1200
75
2400
1.7
440
21
N
140 x 130
AlSiC
Low Loss
1600
85
3200
2.2
500
9
F
140 x 130
AlSiC
Low Loss
1600
85
3200
2.2
500
9
F
140 x 130
Cu
Trench
1600
70
3200
1.7
540
17
N
140 x 130
AlSiC
Low Loss
1800
85
3600
2.2
570
8
E
190 x 140
AlSiC
Low Loss
1800
85
3600
2.2
570
8
E
190 x 140
Cu
Low Loss
2400
85
4800
2.2
800
6
E
190 x 140
AlSiC
Low Loss
2400
85
4800
2.2
800
6
E
190 x 140
Cu
Trench
2400
70
4800
1.7
800
12
N
140 x 130
AlSiC
Trench
3600
70
7200
1.7
1320
8
E
190 x 140
AlSiC
 备注:

   1.总Esw (开关能量) = Eon+Eoff.

IGBT 模块 - 1700V
IGBT模块-双向开关
Part Number
Type
VDRM - (V) 
IC @ Tc
(A)
(°C)
IC(PK)
(A)
VT
(V)
Total
Esw
@
Tc=125°C
(mJ)
Rth(j-c)
(IGBT
arm)
(°C/kW)
Outline
Type
Code
Baseplate
Dimensions
(mm)
Baseplate
Material
Low Loss
±1700
400
75
800
4.9
350
36
P
140 x 73
AlSiC
IGBT模块-斩波
Part Number
Type
IC @ Tc
(A)
(°C)
IC(PK)
(A)
VCE(SAT)
@
Tc=25°C
(V)
Total
Esw
@
Tc=125°C
(mJ)
Rth(j-c)
(IGBT
arm)
(°C/kW)
Outline
Type
Code
Baseplate
Dimensions
(mm)
Baseplate
Material
DIM200WKS17-A
(Upper Arm Control)
Low Loss
200
65
400
2.7
140
90
W
107 x 62
Cu
DIM200WLS17-A
(Lower Arm Control)
Low Loss
200
65
400
2.7
140
90
W
107 x 62
Cu
Low Loss
400
75
400
2.7
270
36
D
140 x 130
AlSiC
Low Loss
400
75
800
2.7
350
36
D
140 x 130
Cu
Low Loss
600
70
600
2.7
620
27
D
140 x 130
AlSiC
Low Loss
600
75
1200
2.7
620
24
D
140 x 130
Cu
Low Loss
800
75
1600
2.7
785
18
D
140 x 130
AlSiC
Trench
800
75
800
2.0
595
27
D
140 x 130
AlSiC
Low Loss
800
75
1600
2.7
785
18
D
140 x 130
Cu
IGBT模块-双开关
Part Number
Type
IC @ Tc
(A)
(°C)
IC(PK)
(A)
VCE(SAT)
@
Tc=25°C
(V)
Total
Esw
@
Tc=125°C
(mJ)
Rth(j-c)
(IGBT
arm)
(°C/kW)
Outline
Type
Code
Baseplate
Dimensions
(mm)
Baseplate
Material
Low Loss
400
75
800
2.7
350
36
D
140 x 130
AlSiC
Trench
400
75
800
2.0
300
50
D
140 x 130
AlSiC
Low Loss
400
75
800
2.7
350
36
D
140 x 130
Cu
Low Loss
600
75
1200
2.7
620
27
D
140 x 130
AlSiC
Low Loss
600
75
1200
2.7
620
27
D
140 x 130
AlSiC
Low Loss
600
75
1200
2.7
620
27
D
140 x 130
Cu
Low Loss
800
75
1600
2.7
700
18
D
140 x 130
AlSiC
Trench
800
75
1600
2.0
595
27
D
140 x 130
AlSiC
Low Loss
800
75
1600
2.7
700
18
D
140 x 130
Cu
Trench
1200
75
2400
2.0
820
18
140 x 130
AlSiC
IGBT模块- 二单元
Part Number
Type
IC @ Tc
(A)
(°C)
IC(PK)
(A)
VCE(SAT)
@
Tc=25°C
(V)
Total
Esw
@
Tc=125°C
(mJ)
Rth(j-c)
(IGBT
arm)
(°C/kW)
Outline
Type
Code
Baseplate
Dimensions
(mm)
Baseplate
Material
Low Loss
200
65
400
2.7
140
90
W
107 x 62
Cu
Trench
200
80
400
2.0
145
100
W
107 x 62
Cu
Low Loss
300
65
600
2.7
260
67
W
107 x 62
Cu
Trench
300
80
600
2.0
118
67
W
107 x 62
Cu
Low Loss
400
75
800
2.7
350
36
P
140 x 73
AlSiC
Low Loss
400
65
800
2.7
350
45
W
107 x 62
Cu
Trench
400
80
800
2.7
190
50
W
107 x 62
Cu
IGBT模块- 一单元
Part Number
Type
IC @ Tc
(A)
(°C)
IC(PK)
(A)
VCE(SAT)
@
Tc=25°C
(V)
Total
Esw
@
Tc=125°C
(mJ)
Rth(j-c)
(IGBT
arm)
(°C/kW)
Outline
Type
Code
Baseplate
Dimensions
(mm)
Baseplate
Material
Low Loss
400
65
600
2.7
250
45
B
107 x 62
Cu
Trench
400
80
800
2.0
210
50
B
107 x 62
Cu
Low Loss
600
65
1200
2.7
530
30
B
107 x 62
Cu
Trench
600
75
1200
2.0
405
33
B
107 x 62
Cu
Low Loss
800
75
1600
2.7
700
18
F
140 x 130
AlSiC
Low Loss
1200
85
2400
2.7
1000
12
F
140 x 130
AlSiC
Trench
1200
75
2400
2.0
820
18
F
140 x 130
AlSiC
Low Loss
1600
75
3200
2.7
1250
9
F
140 x 130
AlSiC
Low Loss
1600
75
3200
2.7
1250
9
F
140 x 130
Cu
Trench
1600
75
3200
2.0
1190
13.5
N
140 x 130
AlSiC
Trench
1800
75
3600
2.0
1230
12
E
190 x 140
AlSiC
Low Loss
2400
75
4800
2.7
1950
6
E
190 x 140
AlSiC
Trench
2400
75
4800
2.0
1640
9
E
190 x 140
AlSiC
Low Loss
2400
75
4800
2.7
1950
6
E
190 x 140
Cu
Trench
2400
75
4800
2.0
1640
9
N
140 x 130
AlSiC
Trench
3600
75
7200
2.0
2460
6
E
190 x 140
AlSiC
 备注:

   1.总Esw (开关能量) = Eon+Eoff.

IGBT 模块 - 3300V
IGBT模块-斩波
Part Number
Type
IC @ Tc
(A)
(°C)
IC(PK)
(A)
VCE(SAT)
@
Tc=25°C
(V)
Total
Esw
@
Tc=125°C
(mJ)
Rth(j-c)
(IGBT
arm)
(°C/kW)
Outline
Type
Code
Baseplate
Dimensions
(mm)
Baseplate
Material
DIM200PKM33-F
(Upper Arm Control)
Low Loss
200
90
400
2.8
655
48
P
140 x 73
AlSiC
DIM200PLM33-F
(Lower Arm Control)
Low Loss
200
90
400
2.8
655
48
P
140 x 73
AlSiC
Low Loss
400
90
800
2.8
1470
24
G
140 x 130
AlSiC
Low Loss
800
90
1600
2.8
2950
12
E
190 x 140
AlSiC
IGBT模块-双开关
Part Number
Type
IC @ Tc
(A)
(°C)
IC(PK)
(A)
VCE(SAT)
@
Tc=25°C
(V)
Total
Esw
@
Tc=125°C
(mJ)
Rth(j-c)
(IGBT
arm)
(°C/kW)
Outline
Type
Code
Baseplate
Dimensions
(mm)
Baseplate
Material
Low Loss
400
90
800
2.8
1470
24
G
140 x 130
AlSiC
IGBT模块-二单元
Part Number
Type
IC @ Tc
(A)
(°C)
IC(PK)
(A)
VCE(SAT)
@
Tc=25°C
(V)
Total
Esw
@
Tc=125°C
(mJ)
Rth(j-c)
(IGBT
arm)
(°C/kW)
Outline
Type
Code
Baseplate
Dimensions
(mm)
Baseplate
Material
Low Loss
100
90
200
2.8
335
96
P
140 x 73
AlSiC
Low Loss
200
90
400
2.8
655
48
P
140 x 73
AlSiC
IGBT模块-一单元
Part Number
Type
IC @ Tc
(A)
(°C)
IC(PK)
(A)
VCE(SAT)
@
Tc=25°C
(V)
Total
Esw
@
Tc=125°C
(mJ)
Rth(j-c)
(IGBT
arm)
(°C/kW)
Outline
Type
Code
Baseplate
Dimensions
(mm)
Baseplate
Material
Low Loss
400
90
800
2.8
1470
24
N
140 x 130
AlSiC
Low Loss
800
90
1600
2.8
2950
12
N
140 x 130
AlSiC
Standard
800
90
1600
3.2
2400
13
J
140 x 130
AlSiC
Low Loss
1200
90
2400
2.8
4400
8
E
190 x 140
AlSiC
 备注:
   1.总Esw (开关能量) = Eon+Eoff.

   2.3300V和6500V的模块都只提供碳化硅底板。

IGBT 模块 - 4500V
IGBT模块-一单元
Part Number
Type
IC @ Tc
(A)
(°C)
IC(PK)
(A)
VCE(SAT)
@
Tc=25°C
(V)
Total
Esw
@
Tc=125°C
(mJ)
Rth(j-c)
(IGBT
arm)
(°C/kW)
Outline
Type
Code
Baseplate
Dimensions
(mm)
Baseplate
Material
Low Loss
600
90
1200
3
5000
12
N
140 x 130
AlSiC
Low Loss
600
90
1200
3
5000
12
X
140 x 130
AlSiC
Low Loss
900
90
1800
3
7450
8
E
190 x 140
AlSiC
 备注:
   1.总Esw (开关能量) = Eon+Eoff.

   2.4500V的模块只提供碳化硅底板。

IGBT 模块 - 6500V
IGBT模块-一单元
Part Number
Type
IC @ Tc
(A)
(°C)
IC(PK)
(A)
VCE(SAT)
@
Tc=25°C
(V)
Total
Esw
@
Tc=125°C
(mJ)
Rth(j-c)
(IGBT
arm)
(°C/kW)
Outline
Type
Code
Baseplate
Dimensions
(mm)
Baseplate
Material
Low Loss
400
90
800
4
5250
15
X
140 x 130
AlSiC
 备注:
   1.总Esw (开关能量) = Eon+Eoff.

   2.3300V和6500V的模块都只提供碳化硅底板。

 
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